**High-Performance HMC1060LP3ETR GaAs pHEMT MMIC Amplifier for 24-40 GHz Millimetre-Wave Applications**

The rapid expansion of millimetre-wave (mmWave) applications, including 5G backhaul, satellite communications, and advanced radar systems, has intensified the demand for high-performance amplification solutions. Operating effectively within the **24 to 40 GHz frequency band** presents significant challenges, requiring amplifiers that offer not just gain but exceptional linearity, stability, and power efficiency. The **HMC1060LP3ETR**, a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) Monolithic Microwave Integrated Circuit (MMIC) amplifier, is engineered to meet these stringent demands, establishing itself as a critical component in modern RF design.

Fabricated using a advanced GaAs pHEMT process, this MMIC amplifier delivers outstanding performance across its wide operational bandwidth. A key characteristic is its **high gain of up to 22 dB**, which is essential for compensating for path loss and noise figure in mmWave systems. This high gain is coupled with a **high output IP3 of +26 dBm**, ensuring superior linearity and the ability to handle complex modulation schemes without significant distortion. This makes the amplifier ideal for applications where signal integrity is paramount, such as in high-capacity communication links.

Furthermore, the HMC1060LP3ETR is designed for versatility and ease of integration. It incorporates an **on-chip bias network**, simplifying the external circuitry required for operation and streamlining the design-in process. The device is also **internally matched to 50 Ohms**, minimizing the need for complex external matching components and reducing both board space and design complexity. Housed in a compact, RoHS-compliant 3x3 mm QFN package, it is perfectly suited for space-constrained applications.

The robust performance of this amplifier is demonstrated by its consistent operation across a wide DC supply range from +3V to +5V, while maintaining a low noise figure. Its combination of high gain, power output, and linearity provides system designers with the necessary headroom to create more efficient and reliable links for point-to-point radios, test and measurement equipment, and electronic warfare systems.

**ICGOOODFIND:** The HMC1060LP3ETR stands out as a superior solution for demanding mmWave designs, offering an exceptional blend of **wide bandwidth, high linearity, and high gain** in a highly integrated, easy-to-use package. Its electrical performance and integration level make it a compelling choice for advancing next-generation communication infrastructure.

**Keywords:** MMIC Amplifier, GaAs pHEMT, Millimetre-Wave, High Linearity, 5G Backhaul