Infineon IRFS7534TRLPBF: High-Performance Power MOSFET for Advanced Switching Applications

Release date:2025-11-10 Number of clicks:123

Infineon IRFS7534TRLPBF: High-Performance Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency, power density, and reliability in modern electronics places immense demands on power switching components. At the heart of many advanced applications, from high-current DC-DC converters and motor drives to sophisticated power supplies, lies the power MOSFET. The Infineon IRFS7534TRLPBF stands out as a premier component engineered to meet these rigorous challenges, offering a blend of cutting-edge technology and robust performance.

This MOSFET is constructed using Infineon's advanced OptiMOS 5 technology, a platform renowned for its exceptional efficiency. A key metric for any switching device is its on-state resistance (R DS(on)), and the IRFS7534TRLPBF excels with an ultra-low maximum of 0.8 mΩ at 10 V. This remarkably low resistance is pivotal for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks. This allows designers to create more compact and energy-efficient end products.

Beyond its static performance, the device is optimized for dynamic switching. The low gate charge (Q G ) and figure of merit (FOM) ensure fast switching speeds, which are critical for high-frequency operation. This capability reduces switching losses, a significant factor in applications like switch-mode power supplies (SMPS) where operating frequencies continue to climb to shrink magnetic component sizes. The low thermal resistance of the package further enhances its ability to manage power dissipation, ensuring stable operation even under strenuous conditions.

Housed in a robust PQFN 8x8 mm package, the IRFS7534TRLPBF offers an excellent power-to-size ratio. This package technology provides superior thermal performance compared to standard packages, thanks to its exposed drain tab that facilitates efficient heat transfer to the PCB. With a high maximum continuous drain current (I D ) of 480 A and a drain-to-source voltage (V DSS ) of 40 V, it is exceptionally well-suited for high-current, low-voltage switching tasks, such as in server VRMs, automotive systems, and industrial power tools.

ICGOOODFIND: The Infineon IRFS7534TRLPBF is a top-tier power MOSFET that sets a high standard for performance in demanding switching environments. Its combination of ultra-low R DS(on), fast switching capabilities, and robust thermal performance makes it an ideal choice for designers aiming to maximize efficiency and power density in their advanced electronic systems.

Keywords: OptiMOS 5 Technology, Ultra-Low R DS(on), High Current Capability, Fast Switching, PQFN Package.

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