Infineon IPP65R065C7: A 650V CoolMOS™ C7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device plays a pivotal role in determining overall performance. The Infineon IPP65R065C7, a 650V CoolMOS™ C7 superjunction MOSFET, stands out as a premier solution engineered to meet these challenges head-on, offering designers a superior component for next-generation applications.

A key differentiator of the C7 technology is its exceptionally low figure-of-merit (R DS(on) x Q G). The IPP65R065C7 boasts a maximum on-state resistance of just 65 mΩ while maintaining an ultra-low gate charge. This optimal balance is critical for minimizing both conduction and switching losses. The result is significantly reduced energy dissipation, which translates directly into higher system efficiency, cooler operation, and the potential for smaller heatsinks and reduced system size.

The benefits extend beyond raw efficiency numbers. The fast switching capability of this MOSFET allows for operation at higher frequencies. This enables power supply designers to shrink the size of passive components like transformers and inductors, a crucial step towards achieving higher power density in compact form factors such as server PSUs, telecom bricks, and industrial SMPS. Furthermore, the device features robust intrinsic body diode with good reverse recovery characteristics, enhancing its reliability in hard-switching and bridge topology applications.

Designed with robustness in mind, the IPP65R065C7 offers a high avalanche ruggedness, ensuring reliable operation under extreme conditions and voltage spikes. Its low effective output capacitance (Eoss) further contributes to reduced turn-on losses in soft-switching topologies like LLC resonant converters. Housed in a TO-220 FullPAK package, it provides the superior isolation necessary for applications requiring a non-insulated mounting interface, simplifying the assembly process.

ICGOOODFIND: The Infineon IPP65R065C7 CoolMOS™ C7 is a benchmark device that masterfully combines high voltage capability, minimal switching losses, and robust performance. It is an indispensable component for engineers aiming to push the boundaries of efficiency and power density in demanding power conversion designs.

Keywords: High-Efficiency, Superjunction MOSFET, Low Switching Losses, High Power Density, 650V Rating