Infineon IPP60R170CFD7: Advanced 600V CoolMOS CFD7 Power Transistor for High-Efficiency Applications
The relentless pursuit of higher efficiency and power density in modern electronics drives the need for superior switching components. At the forefront of this innovation is Infineon Technologies with its IPP60R170CFD7, a 600V CoolMOS™ CFD7 power transistor engineered to set new benchmarks in performance for demanding applications.
This MOSFET is a pinnacle of design, leveraging Infineon's proprietary superjunction (SJ) technology. The CFD7 series represents the seventh generation of this technology, focusing on drastically reducing switching and conduction losses. The key metric, the figure-of-merit (RDS(on) x Qg), is exceptionally low, which is crucial for achieving high switching frequencies without compromising efficiency. A lower RDS(on) of just 170mΩ minimizes conduction losses, while an optimized gate charge (Qg) ensures swift switching, reducing associated losses. This combination allows power supply designers to push the boundaries, creating smaller, lighter, and more efficient systems.
A defining characteristic of the CoolMOS™ CFD7 series, including the IPP60R170CFD7, is its integrated fast body diode. This feature is paramount for performance in half-bridge and full-bridge topologies, commonly used in power factor correction (PFC) stages and LLC resonant converters. The diode exhibits exceptional reverse recovery behavior, significantly reducing switching losses and electromagnetic interference (EMI) during hard commutation. This leads to cooler operation, enhanced reliability, and a simplification of the overall system design by mitigating the need for additional snubber circuits.
The robustness of the IPP60R170CFD7 is further underscored by its high avalanche ruggedness and excellent thermal performance. These traits ensure operational stability even under extreme conditions, such as overloads or voltage spikes, making it a highly reliable choice for critical infrastructure.
The primary applications benefiting from this transistor include:
Server & Telecommunication Power Supplies (PSUs): Where 80 Plus Titanium efficiency standards are mandatory.
Industrial Power Systems: Including motor drives and automation equipment requiring robust performance.
Solar Inverters and EV Charging Infrastructure: Demanding high efficiency and power density.
High-End LED Lighting Drivers: Where efficient and compact design is critical.
The Infineon IPP60R170CFD7 is not merely a component but a significant enabler of next-generation power electronics. Its groundbreaking low figure-of-merit, integrated fast body diode, and superior avalanche ruggedness make it an indispensable solution for engineers aiming to maximize efficiency, power density, and reliability in high-performance 600V applications.
Keywords:
1. Superjunction Technology
2. Figure-of-Merit (FOM)
3. Integrated Fast Body Diode
4. Switching Losses
5. Power Density
