Infineon IPL60R285P7 CoolMOS™ P7 Power Transistor: Delivering High Efficiency and Robust Performance

The relentless pursuit of higher efficiency, power density, and reliability in power electronics is a defining challenge for modern system designers. Addressing these demands head-on, Infineon Technologies has introduced the IPL60R285P7, a standout member of the revolutionary CoolMOS™ P7 family. This 600 V superjunction MOSFET is engineered to set new benchmarks in performance across a wide array of applications, including switched-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and solar inverters.

At the core of the IPL60R285P7's superior performance is its ground-breaking superjunction technology, which has been meticulously refined. This technology enables an exceptionally low specific on-state resistance (R DS(on)) of just 285 mΩ, a critical factor in minimizing conduction losses. When combined with outstanding switching characteristics, this translates into significantly reduced energy losses across the entire operational range. For designers, this means the ability to create systems that operate cooler, require less complex thermal management, and achieve higher overall power efficiency, often exceeding the stringent requirements of 80 PLUS Titanium standards.

Beyond raw efficiency, the robustness and reliability of the IPL60R285P7 are paramount. It is designed to withstand harsh operational environments, featuring a high avalanche ruggedness and an extended safe operating area (SOA). This ensures stable and dependable performance under stressful conditions, such as overloads and voltage spikes, thereby enhancing the longevity and field reliability of the end product. Furthermore, the P7 technology incorporates an integrated fast body diode with exceptional reverse recovery performance (Q rr), which is crucial for minimizing losses in hard-switching and power factor correction (PFC) circuits.

The benefits extend to system-level design as well. The excellent figure of merit (FOM) of the IPL60R285P7 allows for higher switching frequencies. This capability enables the use of smaller passive components like inductors and capacitors, leading to a substantial increase in power density. Engineers can thus design more compact and lighter power solutions without compromising on performance or output.

ICGOOFIND: The Infineon IPL60R285P7 CoolMOS™ P7 is a pinnacle of power transistor design, masterfully balancing ultra-high efficiency, exceptional switching performance, and superior robustness. It empowers engineers to push the boundaries of their designs, creating next-generation power systems that are not only more efficient and compact but also remarkably reliable.

Keywords: CoolMOS™ P7, High Efficiency, Superjunction Technology, Robust Performance, Power Density