Infineon IPB240N04S4-1R0: A High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB240N04S4-1R0 stands as a testament to these principles, representing a significant advancement in power MOSFET technology. This 40V OptiMOS power transistor is engineered to deliver exceptional efficiency and power density in a wide array of applications, from advanced automotive systems and motor drives to high-frequency switched-mode power supplies (SMPS).

A key highlight of the IPB240N04S4-1R0 is its ultra-low on-state resistance (RDS(on)) of just 1.0 mΩ. This remarkably low resistance is a primary factor in minimizing conduction losses, which directly translates to higher overall system efficiency and reduced heat generation. By operating cooler, the MOSFET allows for more compact designs with less need for bulky heat sinks, thereby increasing power density.

Furthermore, this device is optimized for superior switching performance. The low gate charge (Qg) and figure of merit (FOM) ensure rapid switching transitions, which is critical for high-frequency operation. This capability not only improves efficiency but also allows designers to use smaller passive components like inductors and capacitors, leading to more cost-effective and space-constrained solutions.

Housed in the robust and space-saving Infineon’s proprietary S4 (SuperSO8) package, the MOSFET offers an excellent power-to-footprint ratio. The package is designed for enhanced thermal dissipation, ensuring that the device can handle high power levels reliably. This makes it an ideal choice for demanding environments such as 48V board-net systems in mild-hybrid vehicles and high-current DC-DC converters.

The Infineon OptiMOS technology also provides enhanced ruggedness and reliability, featuring a high avalanche ruggedness and an extended safe operating area (SOA). These characteristics ensure robust operation under stressful conditions, including overloads and voltage spikes, providing designers with a critical margin of safety.

ICGOO FIND: The Infineon IPB240N04S4-1R0 is a top-tier power MOSFET that sets a new benchmark for performance. Its combination of ultra-low RDS(on), excellent switching characteristics, and a thermally efficient package makes it a superior choice for designers aiming to push the limits of efficiency and power density in modern electronic systems.

Keywords: Power MOSFET, Ultra-low RDS(on), High Power Density, OptiMOS Technology, S4 Package.