Infineon IRFR3504ZTRPBF: Datasheet, Pinout, Application Circuit and Specifications
The Infineon IRFR3504ZTRPBF is a highly efficient N-channel power MOSFET designed using advanced silicon technology, making it a cornerstone component for a wide array of power management and switching applications. This surface-mount device (SMD) in the D-PAK (TO-252) package is renowned for its low on-state resistance (RDS(on)) and high current handling capability, which are critical for minimizing power losses and improving overall system efficiency.
Datasheet Overview
The datasheet for the IRFR3504ZTRPBF provides comprehensive information necessary for design engineers. Key sections include absolute maximum ratings, electrical characteristics, and typical performance curves. The device is characterized by a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 35A at a case temperature of 25°C. Its ultra-low RDS(on) of just 1.8 mΩ (max) at VGS = 10 V ensures minimal conduction losses, which is paramount for high-efficiency designs in power supplies and motor control.
Pinout Configuration
The pinout for the TO-252 package is straightforward:
Pin 1 (Gate): This is the control pin. Applying a voltage between the Gate and Source terminals activates the MOSFET.
Pin 2 (Drain): The main current flows into the MOSFET through this pin. It is connected to the large tab, which is essential for heat dissipation.
Pin 3 (Source): The main current flows out of the MOSFET through this pin, completing the circuit.
The metal tab is electrically connected to the Drain pin, so proper isolation must be ensured when mounting it to a heatsink.
Application Circuit
A common application for the IRFR3504ZTRPBF is in a synchronous buck converter circuit, which is the heart of modern switch-mode power supplies (SMPS) and voltage regulator modules (VRMs). In such a circuit, the IRFR3504ZTRPBF is typically used as the low-side (synchronous) MOSFET. Its low RDS(on) is crucial here, as it directly reduces the I²R losses during the freewheeling phase of the switching cycle, leading to a cooler and more efficient power supply. It is often paired with a higher-voltage high-side MOSFET and driven by a dedicated PWM controller IC.
Key Specifications
Drain-to-Source Voltage (VDS): 40 V
Continuous Drain Current (ID): 35 A @ TC = 25°C
On-Resistance (RDS(on)): 1.8 mΩ (max) @ VGS = 10 V, ID = 17 A
Gate Threshold Voltage (VGS(th)): 2 V to 4 V
Package: D-PAK (TO-252)
Technology: Advanced Process Technology
ICGOODFIND Summary: The Infineon IRFR3504ZTRPBF stands out as an exceptionally robust and efficient N-channel MOSFET. Its defining features of extremely low on-resistance and high current capacity make it an ideal choice for demanding applications such as DC-DC converters, motor drives, and high-frequency power switching. Engineers consistently select this component for its ability to enhance performance and thermal management in space-constrained, high-power designs.
Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, Buck Converter, Switch-Mode Power Supply (SMPS)
