Infineon IPD079N06L3 GBT MA1: 60V Single N-Channel OptiMOS Power Transistor

The Infineon IPD079N06L3 GBT MA1 represents a significant advancement in power transistor technology, offering engineers a highly efficient and reliable solution for a wide range of power management applications. As part of Infineon’s renowned OptiMOS™ power transistor family, this device is engineered to deliver exceptional performance in compact form factors, making it ideal for automotive, industrial, and consumer electronics.

One of the standout features of the IPD079N06L3 is its low on-state resistance (RDS(on)) of just 7.9 mΩ. This ultra-low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Combined with a voltage rating of 60V, this transistor is perfectly suited for load switching, motor control, and DC-DC conversion circuits where both performance and energy efficiency are critical.

The device is housed in a space-saving DSO-8 (TO-252) package, which optimizes board space without compromising thermal performance. Its advanced trench technology ensures robust switching characteristics and enhanced reliability under demanding conditions. Furthermore, the transistor is AEC-Q101 qualified, guaranteeing its suitability for automotive applications where durability and longevity are paramount.

Designers will appreciate the improved gate charge (Qg) and figure of merit (FOM), which contribute to faster switching speeds and reduced driving losses. This makes the IPD079N06L3 an excellent choice for high-frequency switching power supplies and PWM-controlled systems.

ICGOOODFIND: The Infineon IPD079N06L3 GBT MA1 sets a high standard for power transistors with its low RDS(on), high efficiency, and automotive-grade reliability, making it a top-tier component for modern power design challenges.

Keywords: OptiMOS, Low RDS(on), Power Transistor, Automotive Grade, High Efficiency.