Infineon IHW30N135R3: A High-Performance 1350V IGBT for Robust Power Switching Applications
The relentless pursuit of efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor switching devices. At the forefront of this evolution for high-voltage applications is the Infineon IHW30N135R3, a 1350V IGBT that sets a new benchmark for performance in demanding environments. This device is engineered to deliver robust and efficient power switching, making it an ideal solution for a wide array of industrial systems.
A key defining feature of the IHW30N135R3 is its impressive 1350V blocking voltage capability. This high voltage rating is crucial for applications operating directly from 3-phase mains or in circuits experiencing significant voltage spikes and transients. It provides a substantial safety margin, enhancing system reliability and robustness against overvoltage conditions commonly found in industrial motor drives, renewable energy inverters, and uninterruptible power supplies (UPS).
Beyond its high voltage capability, this IGBT is optimized for low losses. It leverages Infineon's advanced trench gate field-stop technology. This technology achieves an optimal trade-off between low saturation voltage (VCE(sat)) and minimal switching losses. The result is superior energy efficiency, which translates directly into reduced operational costs and cooler system operation, allowing for smaller heatsinks and a more compact design.
The robustness and short-circuit capability of the IHW30N135R3 further solidify its position for industrial use. The device is designed to withstand harsh conditions, including a short-circuit withstand time (tsc) of 10µs. This intrinsic durability ensures system survival under fault conditions, a critical requirement for maintaining uptime in industrial automation and power conversion systems.
Housed in the industry-standard TO-247 package, the IHW30N135R3 offers excellent thermal performance and mechanical stability. Its low EMI behavior and smooth switching characteristics simplify the design of electromagnetic compatibility (EMC) filters, reducing both design time and component count. With a nominal current rating of 30A, it provides ample power handling for a broad spectrum of mid-power applications.
ICGOOODFIND: The Infineon IHW30N135R3 stands out as a premier 1350V IGBT, expertly balancing high voltage robustness, low conduction and switching losses, and exceptional durability. It is a cornerstone component for designers aiming to build next-generation, high-efficiency, and reliable power systems in industrial, renewable energy, and automotive applications.
Keywords: 1350V IGBT, Low Switching Losses, Robust Power Switching, Trenchstop Technology, Short-Circuit Ruggedness
