Infineon IPG20N04S4-12A: High-Performance 40V OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation. In the demanding arenas of automotive and industrial applications, components must perform flawlessly under harsh conditions. The Infineon IPG20N04S4-12A stands out as a premier solution, a 40V OptiMOS power MOSFET engineered to meet these rigorous challenges head-on.
This MOSFET is built on Infineon's advanced OptiMOS technology platform, renowned for its exceptional balance of low on-state resistance and high switching performance. The IPG20N04S4-12A boasts an ultra-low typical R DS(on) of just 1.2 mΩ, a critical figure that directly translates to minimized conduction losses. When a device conducts current, power is lost as heat proportional to its R DS(on). By achieving such a remarkably low value, this MOSFET ensures cooler operation, which enhances overall system efficiency and reduces the need for complex and bulky heat sinking solutions.
The benefits of this low resistance are paramount in high-current switching applications. In the automotive sector, this makes the device an ideal candidate for a wide array of functions, including electric power steering (EPS), braking systems, and transmission control units. It is also exceptionally well-suited for DC-DC converters and motor control circuits in industrial automation, robotics, and power supplies. In these scenarios, every milliohm of resistance counts toward energy savings and thermal management.
Beyond its stellar static performance, the IPG20N04S4-12A is optimized for dynamic operation. Its low gate charge (Q G ) and figure of merit (FOM) ensure fast switching speeds, which are essential for high-frequency switch-mode power supplies (SMPS). This leads to reduced switching losses, allowing designers to push frequencies higher, thereby shrinking the size of passive components like inductors and capacitors to achieve greater power density.
Recognizing the harsh environments of its target applications, this component is designed for robustness. It offers an excellent safe operating area (SOA) and high resilience against avalanche and overcurrent conditions. This inherent ruggedness provides designers with a critical margin of safety, ensuring long-term system durability and reducing the risk of field failures. Furthermore, its qualification for AEC-Q101 standards guarantees its reliability for automotive use, enduring extreme temperatures, humidity, and continuous vibration.
Housed in a space-efficient D 2PAK (TO-263) package, the IPG20N04S4-12A offers an optimal balance between power handling capability and board space savings, making it a versatile choice for modern, compact designs.
ICGOOODFIND: The Infineon IPG20N04S4-12A is a top-tier 40V power MOSFET that sets a high benchmark for performance and reliability. Its combination of ultra-low R DS(on), high switching speed, and automotive-grade ruggedness makes it an indispensable component for engineers designing next-generation, high-efficiency power systems in automotive and industrial markets.
Keywords: OptiMOS Technology, Ultra-low R DS(on), Automotive Applications, High-current Switching, AEC-Q101.
